features low cost diffused junction l o w le a k a g e glass passivated junction h i g h c u rr ent c a pa b i l i t y and similar solvents mechanical data case:jedec do-15,molded plastic terminals: axial lead ,solderable per mil- std-202,method208 polarity: color band denotes cathode end mounting position: any maximum ratings and electrical characteristics ratings at 25 ambient temperature unless otherwise specified. single phase,half wave,60 hz,resistive or inductive load. for capacitive load,derate by 20%. rl203g rl204g RL205G rl206g rl207g units maximum recurrent peak reverse voltage v rrm 200 400 600 800 1000 v ma x imum rms v o lt a g e v rms 140 280 420 560 700 v maximum dc blocking voltage v dc 200 400 600 800 1000 v maximum average f orw ard rectif ied current 9.5mm lead length, @t a =75 peak f orw ard surge current 8.3ms single half -sine-w ave superimpoded on ratde load @t j =125 maximum instantaneous f orw ard voltage @ 2 .0 a v f v maximum reverse current @t a =25 at rated dc blocking voltage @t a =100 typical junction capacitance (note1) c j pf typical thermal resistance (note2) r ja /w operaring junction temperature range t j storage temperature range t stg 50 d o - 1 5 weight: 0.014 ounces,0.39 grams 100 70 i fsm note: 1. measured at 1.0mhz and applied rev erse v oltage of 4.0v dc. -55----+175 40 i r 5.0 a a -55----+175 rl201g --- rl207g a i f(av) 2.0 g l a s s p a s s i v a t ed rectifiers easily cleaned with freon,alcohol,isopropanol the plastic material carries u/l recognition 94v-0 voltage range: 50 --- 1000 v current: 2.0 a 35 20 rl201g rl202g 50 100 1.1 2. thermal resistance f rom junction to ambient. 50.0 70.0 dimensions in millimeters diode semiconductor korea www.diode.kr
0 . 6 . 0 1 0 . 1 1 . 0 10 0 . 8 1 . 0 1 . 2 1 . 4 1 . 5 20 t j =25 pulse width=300 s 0 40 100 1 10 100 20 t j =125 8.3ms single half sine=wave 80 60 0 . 1 1 10 100 10 100 t j =25 20 1 4 0 0.5 1.0 1.5 2.0 0 25 50 75 100 125 single phase half wave 60h z resistive or inductive load 150 2.5 175 amperes instantaneous forward current amperes amperes junction capacitance,pf percent of rated peak reverse voltage% instantaneous reverse current( t j =25 .01 www.diode.kr diode semiconductor korea
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